Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 50 A, VR = 300 V,

VGE = ±15 V, diF/dt = 2010 A/μs,

TJ = 150 °C

-

270

ns

Qrr

Reverse recovery charge

-

5.98

µC

Irrm

Reverse recovery current

-

62

A

Erec

Reverse recovery energy

-

1.6

mJ

RTHj-c

Thermal resistance junction-to-

case

Each diode

-

1.0

1.1

°C/W

RTHc-h

Thermal resistance case-to-

heatsink

Each diode, λgrease = 1 W/(m·°C)

-

0.9

°C/W

1.2

Brake stage

Limiting values at TJ = 25 °C, unless otherwise specified.

1.2.1

IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

650

V

IC

Continuous collector current (TC = 100 °C)

50

A

ICP(1)

Pulsed collector current (tp = 1 ms)

100

A

VGE

Gate-emitter voltage

±20

V

PTOT

Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)

208

W

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature

Table 6. Electrical characteristics of the IGBT, brake stage

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

IC = 1 mA, VGE = 0 V

650

V

VCE(sat)

(terminal)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 50 A

1.95

V

VGE = 15 V, IC = 50 A,

TJ = 150 ˚C

2.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

100

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

± 500

nA

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

4150

pF

Coes

Output capacitance

170

pF

Cres

Reverse transfer capacitance

80

pF

Qg

Total gate charge

VCC = 520 V, IC = 50 A,

VGE = ±15 V

150

nC

A2C50S65M2

Brake stage

DS12340 - Rev 3

page 4/16