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STP33N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP33N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() 2.1 Electrical characteristics (curves) Figure 1. Safe operating area GADG191220180852SOA 101 100 10-1 10-2 10-1 100 101 102 ID (A) VDS (V) Operation in this area is limited by RDS(on) Single pulse, TC = 25 °C, TJ ≤ 150 °C tp = 10 μs tp = 1 μs tp = 1 ms tp = 10 ms tp = 100 μs Figure 2. Normalized thermal impedance GC20540 Figure 3. Output characteristics GADG191220180852OCH 70 60 50 40 30 20 10 0 0 4 8 12 16 ID (A) VDS (V) VGS = 6 V VGS = 7 V VGS = 8 V VGS = 9 V VGS = 10 V Figure 4. Transfer characteristics GADG191220180853TCH 70 60 50 40 30 20 10 0 4 5 6 7 8 9 ID (A) VGS (V) VDS = 20 V Figure 5. Gate charge vs gate-source voltage GADG191220180853QVG 12 10 8 6 4 2 0 600 500 400 300 200 100 0 0 5 10 15 20 25 30 35 Qg (nC) VDS Qg Qgd Qgs VDD = 480 V, ID = 25 A VDS (V) VGS (V) Figure 6. Capacitance variations GADG191220180854CVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz STP33N60DM6 Electrical characteristics (curves) DS12878 - Rev 3 page 5/12 |
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