STP33N60DM6 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STP33N60DM6

Description	N-channel 600 V, 115 m typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 12 page

1

2

3

TO-220

TAB

D(2, TAB)

G(1)

S(3)

AM01475V1

Features

Order code

VDS

RDS(on) max.

ID

STP33N60DM6

600 V

128 mΩ

25 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

•

High-creepage package

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STP33N60DM6

Product summary

Order code

STP33N60DM6

Marking

33N60DM6

Package

TO-220

Packing

Tube

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET

in a TO

‑220 package

STP33N60DM6

Datasheet

DS12878 - Rev 3 - May 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

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STP33N60DM6 Datasheet(PDF) 1 Page - STMicroelectronics

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