STP33N60DM6 datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STP33N60DM6

Description	N-channel 600 V, 115 m typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

6 / 12 page

Figure 7. Static drain-source on-resistance

GADG191220180855RID

127

123

119

115

111

107

RDS(on)

(mΩ)

ID (A)

VGS = 10 V

Figure 8. Normalized on-resistance vs temperature

GADG191220180856RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

Tj (°C)

VGS = 10 V

Figure 9. Normalized gate threshold voltage vs

temperature

GADG191220180856VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

Tj (°C)

ID = 250 µA

Figure 10. Normalized V(BR)DSS vs temperature

GADG191220180856BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

Tj (°C)

ID = 1 mA

Figure 11. Output capacitance stored energy

GADG191220180857EOS

100 200 300 400 500 600

VDS (V)

EOSS

(μJ)

Figure 12. Source-drain diode forward characteristics

GADG191220180856SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

TJ = -50 °C

TJ = 25 °C

TJ = 150 °C

STP33N60DM6

Electrical characteristics (curves)

DS12878 - Rev 3

page 6/12

STP33N60DM6 Datasheet(PDF) 6 Page - STMicroelectronics

STP33N60DM6 Datasheet(HTML) 6 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL