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STM32H753II Datasheet(PDF) 359 Page - STMicroelectronics

Part # STM32H753II
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, 2MB Flash,1MB RAM, 46 com. and analog interfaces, crypto
PDF  361 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H753II Datasheet(HTML) 359 Page - STMicroelectronics

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Revision history
STM32H753xI
358/360
DS12117 Rev 8
4-Mar-2022
8
(continued)
Section 6: Electrical characteristics (rev Y) (continued)
– Updated ts(IN) and th(IN) in Table 83: QUADSPI characteristics in SDR mode
tsr(IN)/tsf(IN) and thr(IN)/thf(IN) in Table 84: QUADSPI characteristics in DDR mode.
Updated Figure 38: Quad-SPI timing diagram - DDR mode.
– Updated maximum sampling time (tS) value in Table 86: ADC characteristics.
Updated Figure 39: ADC accuracy characteristics, Figure 40: Typical connection
diagram when using the ADC with FT/TT pins featuring analog switch function and
Figure 41: Power supply and reference decoupling (VREF+ not connected to
VDDA).
– Updated TL maximum value in Table 91: Temperature sensor characteristics.
– Updated fDFSDMCLK and DuCyCKOUT in Table 99: DFSDM measured timing - 1.62-
3.6 V.
– Updated fTIMxCLK to match an APB1/2 maximum frequency of 120 MHZ in
Table 102: TIMx characteristics.
– Updated tsu(MI) and th(MI) minimum values in Table 105: SPI dynamic
characteristics.
– Updated tISU, tIH, tISUD and tIHD in Table 109: Dynamic characteristics: SD / MMC
characteristics, VDD = 2.7 to 3.6 V, and tISU, tIH in Table 110: Dynamic
characteristics: eMMC characteristics, VDD = 1.71 to 1.9 V. Updated Figure 58:
DDR mode.
Section 7: Electrical characteristics (rev V):
– Updated Figure 67: Power supply scheme.
– Updated Section 7.2: Absolute maximum ratings introduction to device mission
profile.
– Power dissipation (PD) removed from Table 121: General operating conditions
since this parameter is redundant with
ΘJA thermal resistance.
– Replaced Min VDD by Min VDDLDO in Table 122: Supply voltage and maximum
frequency configuration.
– Updated Table 138: High-speed external user clock characteristics.
– Table 149: Flash memory programming: removed reference to single bank
configuration in title, and updated tERASE128KB.
– Updated condition related to
frcc_c_ck in Section : On-chip peripheral current
consumption.
– Added reference to AN4899 in Section 7.3.15: I/O port characteristics. Updated
Fmax for speed 10 and 11 in Table 159: Output timing characteristics (HSLV OFF).
Changed capacitance value for speed 10 and tr/tf, and speed for 11 and tr/tf/Fmax
Table 160: Output timing characteristics (HSLV ON).
– Updated tsu(DV-CLKH)/th(DV-CLKH) and tsu(NWAIT-CLKH)/th(NWAIT-CLKH) in Table 170:
Synchronous multiplexed NOR/PSRAM read timings. Changed t(NWAIT-CLKH) to
tsu(NWAIT-CLKH) and updated tsu(DV-CLKH)/th(DV-CLKH) and tsu(NWAIT-CLKH)/th(NWAIT-
CLKH) in Table 172: Synchronous non-multiplexed NOR/PSRAM read timings.
Updated tsu(SDCLKH _Data) and th(SDCLKH _Data) in Table 176: SDRAM read timings
and Table 177: LPSDR SDRAM read timings. Replaced FMC_CLK by
FMC_SDCLK in Section : SDRAM waveforms and timings.
– Updated ts(IN) and th(IN) in Table 180: QUADSPI characteristics in SDR mode and
tsr(IN)/tsf(IN) and thr(IN)/thf(IN) in Table 181: QUADSPI characteristics in DDR mode.
Updated Figure 90: Quad-SPI timing diagram - DDR mode.
Table 230. Document revision history
Date
Revision
Changes



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