STM32L010R8 datasheet(63/92 Pages) STMICROELECTRONICS

63 / 92 page

DS12325 Rev 3

63/92

STM32L010K8 STM32L010R8

Electrical characteristics

6.3.9

Memory characteristics

RAM memory

Flash memory and data EEPROM

fPLL_OUT

PLL output clock

MHz

tLOCK

PLL input = 16 MHz

PLL VCO = 96 MHz

-115

160

µs

Jitter

Cycle-to-cycle jitter

± 600

IDDA(PLL)

Current consumption on VDDA

-220

450

µA

IDD(PLL)

Current consumption on VDD

-120

150

1. Guaranteed by characterization results, not tested in production.

2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

Table 39. PLL characteristics (continued)

Symbol

Parameter

Value

Unit

Min

Typ

Max(1)

Table 40. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode(1)

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware

registers (only in Stop mode).

Stop mode (or reset)

1.8

Table 41. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

VDD

Operating voltage

Read / Write / Erase

1.8

3.6

tprog

Programming time for

word or half-page

Erasing

3.28

3.94

Programming

3.28

3.94

IDD

Average current during

the whole programming /

erase operation

TA = 25 °C, VDD = 3.6 V

500

700

µA

Maximum current (peak)

during the whole

programming / erase

operation

-1.5

2.5

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