6.5 Electrical Characteristics (continued)

Over recommended input voltage range, TJ = -40 ℃ to 125 ℃. Typical values are at Vin = 12 V andTJ = 25 ℃ (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tPG,DLY

Power good delay time

VFB falling

8

µs

OUTPUT

ton

Minimum on-time

VIN ≥ 5 V, Iout = 1 A

35

70

ns

toff

Minimum off-time

VIN ≥ 5 V, Iout = 1 A

50

60

ns

VFB

Feedback regulation accuracy

-40

℃ ≤ TJ ≤ 125℃

0.792

0.8

0.808

V

IFB,LKG

Input leakage current into FB

VFB = 0.8 V, –40℃ ≤ TJ ≤ 125℃

1

70

nA

PSRR

Power supply rejection ratio

VIN = 12 V, 1.2 VOUT, 1 A, CNR/SS = 220

nF, fsw = 1 MHz, CFF = open, COUT = 3 ×

22 µF, f ≤ 100 kHz

65

dB

VNRMS

Output voltage RMS noise

VIN = 12 V, BW = 100 Hz to 100 kHz, CNR/

SS = 220 nF, fSW = 1 MHz, VOUT = 1.2 V,

CFF = open, COUT = 3 x 22 µF

27.4

µVRMS

VNRMS

Output voltage RMS noise

VIN = 5 V, BW = 100 Hz to 100 kHz, CNR/

SS = 220 nF, fSW = 2.2 MHz, VOUT = 1.2 V,

CFF = open, COUT = 3 x 22 µF

13.3

µVRMS

Vopp

Output ripple voltage at fSW

VIN = 12 V, fSW = 1 MHz, VOUT = 1.2 V,

COUT = 3x22 µF, Lf = 10 nH, Cf = 2x22 µF

9

µVRMS

Vopp

Output ripple voltage at fSW

VIN = 5 V, fSW = 2.2 MHz, VOUT = 1.2 V,

COUT = 3x22µF, Lf = 10nH, Cf = 2x22uF

< 3

µVRMS

RDIS

Output discharge resistance

EN/SYNC = GND, VOUT = 1.2 V, VIN ≥ 5

V. See Typical Characteristics for plot.

7

Ω

RDIS

Output discharge resistance

EN/SYNC = GND, VOUT = 5 V, VIN ≥ 5 V.

See Typical Characteristics for plot.

32

Ω

fSW

Switching frequency

2.2-MHz setting

1.98

2.2

2.42

MHz

fSW

Synchronization range

2.2-MHz setting

1.9

2.2

2.42

MHz

fSW

Switching frequency

1-MHz setting

0.9

1

1.18

MHz

fSW

Synchronization range

1-MHz setting

0.86

1

1.2

MHz

DSYNC

Synchronization duty cycle

45

55

%

tsync_delay Synchronization phase delay

Phase delay from EN/SYNC rising edge

to SW rising edge

90

ns

ISWpeak

Peak switch current limit

TPSM82912(1)

2.9

3.5

4.0

A

ISWpeak

Peak switch current limit

TPSM82913

3.7

4.3

5.1

A

ISWvalley

Valley switch current limit

TPSM82912(1)

3.4

A

ISWvalley

Valley switch current limit

TPSM82913

4.2

A

Inegvalley Negative valley current limit

-1.39

-0.96

A

RDS(ON)

High-side FET on-resistance

VIN ≥ 5 V

57

95

mΩ

Low-side FET on-resistance

VIN ≥ 5 V

20

39

mΩ

(1)

Preview information

TPSM82913

SLVSGJ4A – OCTOBER 2022 – REVISED DECEMBER 2022

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