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AS4C4M4F1 Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

Part # AS4C4M4F1
Description  5V 4M횞4 CMOS DRAM (Fast Page mode)
PDF  18 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C4M4F1 Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

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AS4C4M4F0
AS4C4M4F1
4/11/01; v.0.9
Alliance Semiconductor
P. 7 of 18
®
Fast page mode cycle
Output enable
Self refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCPA
Access time from CAS precharge
–
28
–
35
13
tRASP
RAS
pulse width
50
100K
60
100K
tPC
Read-write cycle time
30
–
35
–
tCP
CAS
precharge time (fast page)
10
–
10
–
tPCM
Fast page mode RMW cycle
80
–
85
–
tCRW
Page mode CAS pulse width (RMW)
12
–
15
–
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCLZ
CAS to output in Low Z
0
–
0
–
ns
8
tROH
RAS hold time referenced to OE
8–
10
–
ns
tOEA
OE access time
–
13
–
15
ns
tOED
OE to data delay
13
–
15
–
ns
tOEZ
Output buffer turnoff delay from OE
0130
15
ns
8
tOEH
OE command hold time
10
–
10
–
ns
tOLZ
OE to output in Low Z
0
–
0
–
ns
tOFF
Output buffer turn-off time
0
13
0
15
ns
8,10
Std
Symbol
Parameter
-50
-60
Unit
Notes
MinMax
MinMax
tRASS
RAS pulse width
(CBR self refresh)
100–100–
µs
tRPS
RAS precharge time
(CBR self refresh)
90
–
105
–
ns
tCHS
CAS
hold time
(CBR self refresh)
8–
10
–
ns



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