 2019 Microchip Technology Inc.

DS20006253A-page 7

MIC33M650

TON Control/Switching Frequency

Switching On Time

TON

—180

—

ns

VIN =5V, VOUT =1V

Switching Frequency

FREQ

—

1.2

—

MHz

VOUT = 1.0V, IOUT =3A,

L= 0.47 µH

—1.1

—

VOUT = 3.3V, IOUT =3A,

L= 0.47 µH

Maximum Duty Cycle

DCMAX

—

100

%

Short-Circuit Protection

High-Side MOSFET

Forward Current Limit

ILIM_HS

810

12

A

Note 2

Low-Side MOSFET Forward

Current Limit

ILIM_LS

—8

—

A

Note 2

Low-Side MOSFET

Negative Current Limit

ILIM_NEG

-2

-3

-4

A

Note 2

N-Channel Zero-Crossing

Threshold

IZC_TH

—0.9

—

A

Current Limit Events before

Hiccup

HICCUP

—

8

—

Cycles

Hiccup Period before

Restart

——

1

—

ms

Internal MOSFETs

High-Side On-Resistance

RDS-ON-HS

—30

60

mΩ

ISW =1A

Low-Side On-Resistance

RDS-ON-LS

—16

40

mΩ

ISW =-1A

Output Discharge

Resistance

RDS-ON-DSC

—10

50

Ω

VEN =0V, VSW =5.5V,

from VOUT to PGND

SW Leakage Current

ILEAK_SW

—1

10

µA

PVIN = 5.5V, VSW =0V,

VEN =0V

Power Good

PG Threshold

PG_TH

87

91

95

%VOUT VOUT Rising (Good)

PG Hysteresis

PG_HYS

—

4

—

%VOUT VFB =VREF, VPG =5.5V

PG Blanking Time

PG_BLANK

—

65

—

µs

PG Output Leakage Current

PG_LEAK

—

30

300

nA

PG Sink Low Voltage

PG_SINKV

—

—

200

mV

VFB =0V, VPG =5.5V,

IPG =10mA

Thermal Shutdown

Thermal Shutdown

TSHDN

—+165

—

°C

TJ rising

Thermal Shutdown

Hysteresis

TSHDN_HYST

—+22

—

°C

TJ falling

Thermal Latch-Off Soft Start

Cycles

TH_LATCH

—

4

—

Cycles

ELECTRICAL CHARACTERISTICS(1) (CONTINUED)

Electrical Specifications: Unless otherwise specified, PVIN =5V; VOUT =1V; COUT =2 x47µF; TA =+25°C.

Boldface values indicate -40°C

 TJ  +125°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Specification for packaged product only.

2:

Tested in open loop. The closed-loop current limit is affected by the inductance value.