The TMF3202Z is an enhancement type N-channel field-effect

transistor. The source and substrate are interconnected. Internal

bias circuits enable DC stabilization and a very good cross-

modulation performance during AGC. Integrated diodes between

the gates and source protect against excessive input voltage

surges. The transistor has a SOT343 micro-miniature plastic

package.

- Gain controlled amplifier with AGC

- Integrated gate protection diodes

- High AGC-range, high gain, low noise figure

- Gain controlled input stage for UHF and VHF tuners

- Professional communications equipment

Page 1 of 8

http://www.tachyonics.co.kr

October. 2005.

Rev. 1.0

N-Channel Dual-Gate MOSFET

Preliminary Specification

TMF3202Z

□ Absolute Maximum Ratings (T

Drain-Source Voltage

Drain Current

Gate 1 Current

Total Power Dissipation

Storage Temperature

Operating Junction Temperature

Ratings

Unit

10

V

Parameter

Symbol

200

mW

mA

±10

mA

30

℃

150

℃

-65 ~ 150

Caution : Electro Static Discharge sensitive device, observe handling precaution

SOT343

1. SOURCE

3. GATE 2

2. DRAIN

4. GATE 1

Unit in mm

2

3

1

4