DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14853EJ1V0DS00 (1st edition)

Date Published June 2000 NS CP(K)

Printed in Japan

©

2000

NPN SILICON RF TRANSISTOR

2SC5667

NPN SILICON RF TRANSISTOR FOR

LOW NOISE

⋅⋅⋅⋅ HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

• Ideal for low noise

⋅ high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA

• Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA

• High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA

•fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

• 3-pin ultra super minimold (t = 0.75 mm)

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5667

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5667-T1

3 kpcs/reel

• Pin 3 (collector) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

3.3

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

35

mA

Total Power Dissipation

Ptot

Note

115

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.