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2SC5667 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # 2SC5667
Description  NPN SILICON RF TRANSISTOR
PDF  22 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5667 Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet P14853EJ1V0DS00
4
2SC5667
VCE = 1 V
f = 2 GHz
20
18
16
14
12
10
8
4
2
6
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN,
MAXIMUM AVAILABLE POWER GAIN,
MAXIMUM STABLE POWER GAIN
vs. COLLECTOR CURRENT
MSG.
MAG.
|S21e|
2
VCE = 2 V
f = 2 GHz
20
18
14
16
12
10
8
6
4
2
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN,
MAXIMUM AVAILABLE POWER GAIN,
MAXIMUM STABLE POWER GAIN
vs. COLLECTOR CURRENT
MSG.
MAG.
|S21e|
2
VCE = 2 V, f = 2 GHz
Icq = 5 mA (RF OFF)
30
20
10
0
–10
–20
100
80
60
40
20
0
–30
–20
–10
0
10
20
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Pout
IC
VCE = 2 V, f = 1 GHz
Icq = 5 mA (RF OFF)
30
20
10
0
–10
–20
100
80
60
20
40
0
–30
–20
–10
20
10
0
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Pout
IC
VCE = 2 V
IC = 20 mA
40
35
30
25
15
20
10
5
0
0.1
1
10
Frequency f (GHz)
INSERTION POWER GAIN,
MAXIMUM AVAILABLE POWER GAIN,
MAXIMUM STABLE POWER GAIN
vs. FREQUENCY
MAG.
MSG.
|S21e|
2
VCE = 1 V
IC = 20 mA
40
35
30
25
15
20
10
5
0
0.1
1
10
Frequency f (GHz)
INSERTION POWER GAIN,
MAXIMUM AVAILABLE POWER GAIN,
MAXIMUM STABLE POWER GAIN
vs. FREQUENCY
MAG.
MSG.
|S21e|
2



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