Data Sheet P14853EJ1V0DS00

2

2SC5667

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

–

–

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

–

–

100

nA

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 5 mA

50

70

100

–

RF Characteristics

Gain Bandwidth Product

fT

VCE = 2 V, IC = 20 mA, f = 2 GHz

18

21

–

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz

9.0

11.0

–

dB

Insertion Power Gain (2)

S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz

9.5

11.5

–

dB

Noise Figure

NF

VCE = 2 V, IC = 5 mA, f = 2 GHz,

ZS = Zopt

–1.1

1.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

–

0.24

0.30

pF

Maximum Available Power Gain

MAG.

Note 3

VCE = 2 V, IC = 20 mA, f = 2 GHz

–

12.5

–

dB

Maximum Stable Power Gain

MSG.

Note 4

VCE = 2 V, IC = 20 mA, f = 2 GHz

–

13.5

–

dB

Note 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2 %

2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when

the emitter is connected to the guard pin

3. MAG. =

4. MSG. =

hFE CLASSIFICATION

Rank

FB

Marking

UB

hFE Value

50 to 100

(k –

√√√√ (k2 – 1) )

S21

S12

S21

S12