DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15286EJ1V0DS00 (1st edition)

Date Published February 2001 NS CP(K)

Printed in Japan

©

2001

NPN SILICON RF TRANSISTOR

2SC5676

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

• Low voltage operation, low phase distortion

• Ideal for OSC applications

• Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5676

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5676-T1

3 kpcs/reel

• Pin 3 (Collector) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

5.5

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

100

mA

Total Power Dissipation

Ptot

Note

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.