Data Sheet P15286EJ1V0DS

2

2SC5676

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

–

–

200

nA

Emitter Cut-off Current

IEBO

VBE = 1 V, IC = 0 mA

–

–

200

nA

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 10 mA

100

–

160

–

RF Characteristics

Gain Bandwidth Product

fT

VCE = 1 V, IC = 10 mA, f = 2 GHz

4.0

5.5

–

GHz

Insertion Power Gain

S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz

2.5

4.0

–

dB

Noise Figure

NF

VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

–1.8

3.0

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 0.5 V, IE = 0 mA, f = 1 MHz

–

0.9

1.2

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when

the emitter is connected to the guard pin

hFE CLASSIFICATION

Rank

FB

Marking

UC

hFE Value

100 to 160