PowerFLAT 5x6 HV

for PowerGaN

1

2

3

4

G4D5678S12KS3

D(5,6,7,8)

G(4)

KS(3) S(1,2)

Features

Order code

VDS

RDS(on) max.

ID

Series

SGT65R65AL

650 V

65 mΩ

25 A

G-HEMT

•

Enhancement mode normally off transistor

•

Very high switching speed

•

High power management capability

•

Extremely low capacitances

•

Kelvin source pad for optimum gate driving

•

Zero reverse recovery charge

Applications

•

AC-DC converters

•

AC-DC PSU for server and telecom

•

LED illumination

•

Uninterruptable power supplies (UPS)

Description

The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with

a well established packaging technology. The resulting G-HEMT device provides

extremely low conduction losses, high current capability and ultra fast switching

operation to enable high power density and unbeatable efficiency performances.

Product status link

SGT65R65AL

Product summary

Order code

SGT65R65AL

Marking

65R65A

Package

PowerFLAT 5x6 HV

for PowerGaN

Packing

Tape and reel

650 V, 49 mΩ typ., 25 A, e-mode PowerGaN transistor

SGT65R65AL

Datasheet

DS13251 - Rev 7 - March 2023

For further information contact your local STMicroelectronics sales office.

www.st.com