2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 25 μA

650

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 650 V

0.5

μA

VGS = 0 V, VDS = 650 V, TJ = 150 °C

50

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 6 V

100

μA

VGS(th)

Gate threshold voltage

VDS = 0.01 V, ID = 2.3 mA

1.8

V

RDS(on)

Static drain-source on-resistance

VGS = 6 V, ID = 15 A

49

65

mΩ

VGS = 6 V, ID = 15 A, TJ = 150 °C

116

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS = 400 V, f = 1 MHz

-

286

-

pF

Coss

Output capacitance

-

85

-

pF

Crss

Reverse transfer capacitance

-

3

-

pF

Co(er)(1)

Equivalent output capacitance

energy related

VGS = 0 V, VDS = 0 to 400 V

-

125

-

pF

Co(tr)(2)

Equivalent output capacitance

time related

-

156

-

pF

RG

Intrinsic gate resistance

f = 5 MHz, ID = 0 A

-

1.2

-

Ω

Vplat

Gate plateau voltage

VDS = 400 V, ID = 15 A

-

2.5

-

V

Qg

Total gate charge

VGS = 0 to 6 V, VDS = 400 V, ID = 15 A

(see Figure 19. Test circuit for gate

charge behavior)

-

5.4

-

nC

Qgs

Gate-source charge

-

1.3

-

nC

Qgd

Gate-drain charge

-

1.9

-

nC

Qrr

Reverse recovery charge

VGS = 0 V, VDS = 400 V

-

0

-

nC

Qoss

Output charge

-

70

-

nC

1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to the stated

value.

2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to the stated

value.

SGT65R65AL

Electrical characteristics

DS13251 - Rev 7

page 3/17