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AT25SF161 Datasheet(PDF) 13 Page - Renesas Technology Corp

Part # AT25SF161
Description  16-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/0 and Quad-IQ Support
PDF  51 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25SF161 Datasheet(HTML) 13 Page - Renesas Technology Corp

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AT25SF161
DS-25SF161–
046I–02/2021
then lowered) requires the first byte instruction code, thus returning to normal operation. A Continuous Read Mode Reset
command can also be used to reset (M7-0) before issuing normal commands.
Figure 6-5. Dual-I/O Read Array (Previous command set M5, M4 = 1,0)
6.4
Quad-Output Read Array (6Bh)
The Quad-Output Read Array command is similar to the Dual-Output Read Array command. The Quad-Output Read
Array command allows four bits of data to be clocked out of the device on every clock cycle, rather than just one or two.
The Quad Enable bit (QE) of the Status Register must be set to enable for the Quad-Output Read Array instruction.
The Quad-Output Read Array command can be used at any clock frequency, up to the maximum specified by fRDQO. To
perform the Quad-Output Read Array operation, the CS pin must first be asserted and then the opcode 6Bh must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
location of the first byte to read within the memory array. Following the three address bytes, a single dummy byte must
also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being
output on the I/O3-0 pins. The data is always output with the MSB of a byte first and the MSB is always output on the I/O3
pin. During the first clock cycle, bit 7 of the first data byte will be output on the I/O3 pin while bits 6, 5, and 4 of the same
data byte will be output on the I/O2, I/O1, and I/O0 pins, respectively. During the next clock cycle, bits 3, 2, 1, and 0 of the
first data byte will be output on the I/O3, I/O2, I/O1 and I/O0 pins, respectively.
The sequence continues with each byte of data being output after every two clock cycles. When the last byte (1FFFFFh)
of the memory array has been read, the device will continue reading from the beginning of the array (000000h). No
delays will be incurred when wrapping around from the end of the array to the beginning of the array.Deasserting the CS
pin will terminate the read operation and put the WP, HOLD, SO, SI pins into a high-impedance state. The CS pin can be
deasserted at any time and does not require that a full byte of data be read.
Figure 6-6. Quad-Output Read Array
6.5
Quad-I/O Read Array(EBh)
The Quad-I/O Read Array command is similar to the Quad-Output Read Array command. The Quad-I/O Read Array
command allows four bits of address to be clocked into the device on every clock cycle, rather than just one.
The Quad-I/O Read Array command can be used at any clock frequency, up to the maximum specified by fRDQO. To
perform the Quad-I/O Read Array operation, the CS pin must first be asserted and then the opcode EBh must be clocked
into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the location
I/O0
(SI)
SCK
23
1
0
01101011
67
5
410 11
9
812
39
42 43
41
40
37 38
33
36
35
34
31 32
29 30
44
47 48
46
45
Opcode
AAAA
AAA
AA
XXXXXXXX
Address Bits A23-A0
Don't Care
Byte 1
OUT
Byte 2
OUT
Byte 3
OUT
Byte 4
OUT
Byte 5
OUT
I/O1
(SO)
High-impedance
D5 D1 D5 D1 D5 D1 D5 D1 D5 D1
I/O2
(WP)
High-impedance
D6 D2 D6 D2 D6 D2 D6 D2 D6 D2
I/O3
(HOLD)
MSB
MSB
MSB
MSB
MSB
High-impedance
D7 D3 D7 D3 D7 D3 D7 D3 D7 D3
D4 D0 D4 D0 D4 D0 D4 D0 D4 D0
CS



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