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TO-247

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Features

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AEC-Q101 qualified

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No or negligible reverse recovery

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Switching behavior independent of temperature

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Robust high-voltage periphery

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PPAP capable

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Operating Tj from -40 °C to 175 °C

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ECOPACK 2 compliant

Applications

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OBC (on board battery chargers)

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PHEV - EV charging stations

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Resonant LLC topology

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PFC functions (power factor corrector)

Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap

material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode

will boost the performance in hard switching conditions. This rectifier will enhance the

performance of the targeted application. Its high forward surge capability ensures a

good robustness during transient phases.

Product status link

STPSC31H12C-Y

Product summary

IF(AV)

2 x 15 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

Product label

2 X 15 A, 1200 V power Schottky silicon carbide diode

STPSC31H12C-Y

Datasheet

DS13325 - Rev 2 - February 2021

For further information contact your local STMicroelectronics sales office.

www.st.com