STPSC31H12CWY datasheet(3/9 Pages) STMICROELECTRONICS

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Table 4. Dynamic electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

QCj (1)

Total capacitive charge

VR = 800 V

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

1200

VR = 800 V, Tc = 25 °C, F = 1 MHz

Most accurate value for the capacitive charge:

QcjVR = ∫0VRCjVdV

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, per diode)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VF(V)

Ta = 150 °C

Pulse test : tp = 500 µs

Ta = 25 °C

Ta = -40 °C

IF(A)

Figure 2. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100

200

300

400

500

600

700

800

900

1000

1100

1200

VR (V)

Tj = 25 °C

Tj = 150 °C

IR (µA)

Figure 3. Peak forward current versus case temperature

(per diode)

100

120

140

100

125

150

175

TC(°C)

IM(A)

δ=tp/T

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

Figure 4. Junction capacitance versus reverse voltage

applied (typical values, per diode)

200

400

600

800

1000

1200

0.1

1.0

100

1000

10000

VR(V)

Cj(pF)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

STPSC31H12C-Y

Characteristics (curves)

DS13325 - Rev 2

page 3/9

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