1

Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C , unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

V

IF(RMS)

Forward rms current

38

A

IF(AV)

Average forward current

Tc = 150 °C, DC current

Per diode

15

A

Per device

30

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tc = 25 °C

105

A

tp = 10 ms sinusoidal

Tc = 125 °C

90

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature (1)

-40 to +175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

Per diode

0.50

0.70

°C/W

Per device

0.25

0.35

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

7.5

90

µA

Tj = 150 °C

-

45

600

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 15 A

-

1.35

1.50

V

Tj = 150 °C

-

1.75

2.25

1. Pulse test: tp = 10 ms, δ < 2%

2. Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.09 x IF(AV) + 0.0775 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPSC31H12C-Y

Characteristics

DS13325 - Rev 2

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