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HIP0061AS2 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # HIP0061AS2
Description  60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP0061AS2 Datasheet(HTML) 4 Page - Renesas Technology Corp

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HIP0061
FN3982 Rev 0.00
Page 4 of 10
December 1997
FIGURE 1C. 125oC SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
FIGURE 3. TYPICAL SATURATION CHARACTERISTICS
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 6. NORMALIZED BVDSS vs JUNCTION TEMPERATURE
Typical Performance Curves (Continued)
0.1
10
10
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100
10ms
1ms
100
s
DC
100ms
1
TC = 125oC
TJ = MAX RATED
tAV, TIME IN AVALANCHE (ms)
1
0.01
1.0
0.1
5
10
50
0.001
STARTING TJ = 125oC
STARTING TJ = 25oC
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0
2.5
5.0
7.5
10.0
VGS = 4V
VGS = 5V
PULSE DURATION = 300
s, TC = 25oC
VGS = 10V
VGS = 8V
VGS = 6V
0
2
4
6
8
10
0
5
10
15
20
VGS, GATE TO SOURCE VOLTAGE (V)
VDS = 15V
25oC
-40oC
125oC
TJ, JUNCTION TEMPERATURE (oC)
0
0.5
1.0
1.5
2.0
2.5
-75
-25
25
75
125
175
PULSE DURATION = 300
s, VGS = 10V, ID = 3.5A
TJ, JUNCTION TEMPERATURE (oC)
-75
-25
25
75
125
175
0.8
0.9
1.0
1.1
1.2
ID = 100A



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