FN3982 Rev 0.00

Page 1 of 10

December 1997

FN3982

Rev 0.00

December 1997

HIP0061

60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

DATASHEET

Features

• Three 3.5A Power MOS N-Channel Transistors

• Output Voltage to 60V

•rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V

• Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor

• Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor

• Grounded Tab Eliminates Heat Sink Isolation

Applications

• Automotive

•Appliance

• Industrial Control

• Robotics

• Relay, Solenoid, Lamp Drivers

Description

The HIP0061 is a power MOSFET array that consists of

three matched N-Channel enhancement mode MOS transis-

tors connected in a common source configuration. The

advanced Intersil PASIC2 process technology used in this

product utilizes efficient geometries that provides outstand-

ing device performance and ruggedness.

The HIP0061 is designed to integrate three power devices in

one chip thus providing board layout area and heat sink sav-

ings for applications such as Motor Controls, Lamps,

Solenoids and Resistive Loads.

Symbol

Ordering Information

PART NUMBER

TEMP.

RANGE (oC)

PACKAGE

PKG.

NO.

HIP0061AS1

-40 to 125

7 Ld Staggered

Vertical SIP

Z7.05C

HIP0061AS2

-40 to 125

7 Ld Gullwing SIP Z7.05B

DRAIN3

GATE3

DRAIN1

GATE1

DRAIN2

SOURCE, TAB

GATE2

4

1

2

3

5

6

7

Pinouts

HIP0061AS1

(SIP - VERTICAL)

TOP VIEW

HIP0061AS2

(SIP - GULLWING)

TOP VIEW

7 DRAIN3

6GATE3

5 DRAIN2

4 SOURCE

3GATE2

2 DRAIN1

1GATE 1

TAB

TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4

TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4

7 DRAIN3

6GATE3

5 DRAIN2

4 SOURCE

3GATE2

2 DRAIN1

1GATE 1

TAB