RJK1002DPP-A0

Preliminary

R07DS1445EJ0101 Rev.1.01

Page 2 of 6

2020.1.9

Thermal Impedance

Item

Symbol

Max. Value Note4

Unit

Channel to case thermal impedance

θ

ch-c

4.17

°

C/W

Notes : 4. This data is the designed target maximum value on Renesas’s measurement condition. (Not tested)

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

100

—

—

V

ID = 10mA, VGS = 0

Gate to source leak current

IGSS

—

—

±0.1

µ

A

VGS = ±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

—

1

µ

A

VDS = 100 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

4.0

V

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

6.0

7.6

mΩ

ID = 35 A, VGS = 10 V Note5

Forward transfer admittance

|yfs|

—

135

—

S

ID = 35 A, VD = 10 V Note5

Input capacitance

Ciss

—

6450

—

pF

VDS = 10 V

VGS = 0

f = 1 MHz

Output capacitance

Coss

—

1000

—

pF

Reverse transfer capacitance

Crss

—

240

—

pF

Gate Resistance

Rg

—

1.5

—

Ω

Total gate charge

Qg

—

94

—

nC

VDD= 50 V

VGS = 10 V,

ID = 35 A

Gate to source charge

Qgs

—

33

—

nC

Gate to drain charge

Qgd

—

19

—

nC

Turn-on delay time

td(on)

—

40

—

ns

VGS = 10 V

ID = 35 A

VDD ≅ 30 V

Rg = 4.7 Ω

Rise time

tr

—

13

—

ns

Turn-off delay time

td(off)

—

80

—

ns

Fall time

tf

—

13

—

ns

Body-drain diode forward voltage

VDF

—

0.85

1.5

V

IF = 70 A, VGS = 0 Note5

Body-drain diode reverse recovery time

trr

—

65

—

ns

IF = 70 A, VGS = 0

diF/dt = 100 A/µs

Notes: 5. Pulse test