R07DS1445EJ0101 Rev.1.01

Page 1 of 6

2020.1.9

Preliminary Datasheet

RJK1002DPP-A0

N-Channel MOSFET

100 V, 70 A, 7.6 mΩ

Features

•

High speed switching

•

Low drive current

•

Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V)

•

Package TO-220FPA

•

Quality Grade : Standard

Outline

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

100

V

Gate to source voltage

VGSS

±20

V

Drain current

ID Note1

70

A

Drain peak current

ID (pulse) Note2

210

A

Body-drain diode reverse drain current

IDR

70

A

Avalanche current

IAP Note3

35

A

Avalanche energy

EAS Note3

123

mJ

Channel dissipation

Pch Note1

30

W

Channel temperature

Tch

150

°

C

Storage temperature

Tstg

–55 to +150

°

C

Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a

reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate

reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of

Semiconductor Devices) and individual reliability data.

Notes: 1. Tc = 25°C

2. PW ≤ 10 µs, duty cycle ≤ 1%

3. Value at L = 100 µH, Tch = 25°C, Rg ≥ 50 Ω,

R07DS1445EJ0101

Rev.1.01

2020.1.9

(Package name:TO-220FPA)

Renesas Package code:PRSS0003AP-A

D

G

S

1 2

3

1.Gate

2.Drain

3.Souce