D5V0F1U2LP3Q

Document number: DS42344 Rev. 1 - 2

2 of 5

www.diodes.com

June 2022

© 2022 Copyright Diodes Incorporated. All Rights Reserved.

D5V0F1U2LP3Q

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

IPP

1.5

A

8/20

μs, Per Figure 3

ESD Protection

– Contact Discharge

VESD_Contact

±15

kV

Standard IEC 61000-4-2

ESD Protection

– Air Discharge

VESD_Air

±20

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

RJA

500

C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

VRWM

—

—

5.5

V

—

Reverse Current (Note 6)

IR

—

—

100

nA

VR = 5.0V

Reverse Breakdown Voltage

VBR

6.0

—

—

V

IR = 1mA

Reverse Clamping Voltage, Positive Transients

(Note 7)

VCL

—

10

12

V

IPP = 1A, tp = 8/20μs

Dynamic Resistance

RDYN

—

1.4

—

Ω

IR = 1A, tp = 8/20μs

Capacitance (Note 8)

CT

—

0.4

0.65

pF

VR = 2.5V, f = 1MHz

—

0.5

—

pF

VR = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on

Diodes Incorporated’s suggested pad layout, which can be found on our website

at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

7. Clamping voltage value is based on an 8 x 20µs peak pulse current (Ipp) waveform.

8. Measured from any I/O to GND.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

250

175

Note 5

200

225

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (

癈 )

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200

(°C)