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BFG197/X Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFG197/X Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 13 page ![]() 1995 Sep 13 3 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL CHARACTERISTICS Note 1. TS is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current DC value, continuous − 100 mA Ptot total power dissipation up to Ts =75 °C; note 1 − 350 mW Tstg storage temperature range −65 +150 °C Tj junction operating temperature − 175 °C SYMBOL PARAMETER VALUE UNIT Rth j-s from junction to soldering point; note 1 290 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB =5V −− 100 nA hFE DC current gain IC = 50 mA; VCE =5V 40 110 − Cc collector capacitance IE =ie = 0; VCB = 8 V; f = 1 MHz − 1.5 − pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 3.3 − pF Cre feedback capacitance IC =ic = 0; VCB =8V; f=1MHz − 0.85 − pF fT transition frequency IC = 50 mA; VCE = 4 V; f = 2 GHz − 7.5 − GHz GUM maximum unilateral power gain (note 1) IC = 50 mA; VCE =6V; Tamb =25 °C; f = 1 GHz − 16 − dB IC = 50 mA; VCE =6V; Tamb =25 °C; f = 2 GHz − 10 − dB F noise figure Γ s = Γopt; IC = 15 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 50 mA; VCE =6V; Tamb =25 °C; f = 2 GHz − 2.3 − dB d2 second order intermodulation distortion VCE =6V;Vo = 50 dBmV; −−51 − dB G UM 10 s 21 2 1s 11 2 – () 1s 22 2 – () ------------------------------------------------------------ dB. log = |
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