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BFG425W Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFG425W Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1998 Mar 11 5 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W Fig.3 DC current gain as a function of collector current; typical values. (1) VCE =3V. (2) VCE =2V. (3) VCE =1V. handbook, halfpage 010 20 40 30 MGG682 120 0 40 80 IC (mA) hFE (3) (2) (1) IC = 0; f = 1 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 01 5 200 120 40 0 80 160 23 4 MGG683 VCB (V) Cre (fF) Fig.5 Transition frequency as a function of collector current; typical values. VCE = 2 V; f = 2 GHz; Tamb =25 °C. handbook, halfpage 25 0 5 10 15 20 MGG684 110 102 fT (GHz) IC (mA) VCE = 2 V; f = 900 MHz. Fig.6 Maximum stable gain as a function of collector current; typical values. handbook, halfpage 010 20 40 30 MGG685 30 0 10 20 IC (mA) MSG (dB) |
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