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BFG425W Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BFG425W
Description  NPN 25 GHz wideband transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFG425W Datasheet(HTML) 3 Page - NXP Semiconductors

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1998 Mar 11
3
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the emitter pins.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
10
V
VCEO
collector-emitter voltage
open base
−
4.5
V
VEBO
emitter-base voltage
open collector
−
1V
IC
collector current (DC)
−
30
mA
Ptot
total power dissipation
Ts ≤ 103 °C; note 1; see Fig.2
−
135
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
40
160
200
150
50
0
100
80
120
MGG681
Ts (°C)
Ptot
(mW)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
350
K/W



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