BLC10G22XS-401AVT

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© Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet

Rev. 1 — 20 May 2022

7 of 14

BLC10G22XS-401AVT

Power LDMOS transistor

7.4 Graphical data

7.4.1 Pulsed CW

VDS =30V; IDq = 650 mA; VGS(amp)peak = 0.745 V;

tp = 100 s;  =10 %.

(1) f = 2110 MHz

(2) f = 2155 MHz

(3) f = 2200 MHz

VDS =30V; IDq = 650 mA; VGS(amp)peak =0.745 V;

tp = 100 s;  =10 %.

(1) f = 2110 MHz

(2) f = 2155 MHz

(3) f = 2200 MHz

Fig 3.

Power gain as a function of output power;

typical values

Fig 4.

Drain efficiency as a function of output power;

typical values

VDS =30V; IDq = 770 mA; VGS(amp)peak = 0.764 V.

(1) f = 2110 MHz

(2) f = 2155 MHz

(3) f = 2200 MHz

Fig 5.

Normalized AM to PM as a function of output power; typical values

amp01767

34

38

42

46

50

54

58

12

13

14

15

16

17

PL (dBm)

Gp

Gp

(dB)

(dB)

(dB)

(3)

(3)

(3)

(2)

(2)

(2)

(1)

(1)

(1)

amp01768

34

38

42

46

50

54

58

0

20

40

60

80

PL (dBm)

ηD

ηD

(%)

(%)

(%)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

amp01769

34

38

42

46

50

54

58

-25

-20

-15

-10

-5

0

5

PL (dBm)

AM to PM

AM to PM

AM to PM

(deg)

(deg)

(deg)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)