2SC5676 datasheet(5/30 Pages) RENESAS

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Data Sheet PU10065EJ01V0DS

µµµµPA859TD

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

(1) Q1

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−−

100

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−−

100

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 10 mA

110

140

−

Gain Bandwidth Product

VCE = 1 V, IC = 10 mA, f = 2 GHz

10.0

12.0

−

GHz

Insertion Power Gain

S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz

7.0

9.0

−

Noise Figure

VCE = 1 V, IC = 3 mA, f = 2 GHz,

ZS = Zopt

−

1.5

2.0

Reverse Transfer Capacitance

Cre

Note 2

VCB = 0.5 V, IE = 0 mA, f = 1 MHz

−

0.4

0.7

(2) Q2

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−−

200

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−−

200

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 10 mA

100

120

160

−

Gain Bandwidth Product

VCE = 1 V, IC = 10 mA, f = 2 GHz

4.0

5.5

−

GHz

Insertion Power Gain

S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz

2.5

4.0

−

Noise Figure

VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

−

1.8

3.0

Reverse Transfer Capacitance

Cre

Note 2

VCB = 0.5 V, IE = 0 mA, f = 1 MHz

−

0.9

1.2

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value of Q1

70 to 140

hFE Value of Q2

100 to 160

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