Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DX

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency

diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

P

tot

Total power dissipation

T

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

-

1.0

V

I

Csat

Collector saturation current

f = 16kHz

4.5

-

A

V

F

Diode forward voltage

I

1.6

2.0

V

t

f

Fall time

I

0.7

-

µs

PINNING - SOT399

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

I

B

Base current (DC)

-

4

A

I

BM

Base current peak value

-

6

A

P

tot

Total power dissipation

T

25 ˚C

-

45

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

without heatsink compound

-

3.7

K/W

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

case

12 3

b

c

e

July 1998

1

Rev 1.200