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BU508DX Datasheet(PDF) 3 Page - NXP Semiconductors |
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BU508DX Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Switching times test circuit Fig.4. Typical DC current gain. h FE = f (IC) parameter V CE IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE + 150 v nominal adjust for ICsat 1mH 12nF D.U.T. LB IBend -VBB ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.1 1 10 1 10 100 IC/A h FE BU508AD July 1998 3 Rev 1.200 |
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