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BU508DX Datasheet(PDF) 4 Page - NXP Semiconductors |
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BU508DX Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX Fig.5. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.6. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.7. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.8. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) BU508AD 0.1 1 10 0 0.2 0.4 0.6 0.8 1 IC / A VCESAT / V 0.1 0.3 0.5 0.7 0.9 BU508AD 0.1 1 10 0.1 1 10 IC = 4.5A IC = 6A IC = 3A VCESAT/V IB/A 0 123 4 0.6 0.8 1 1.2 1.4 IC = 6A IC = 4.5A IC = 3A IB / A VBESAT / V BU508AD 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound July 1998 4 Rev 1.200 |
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