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PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

PSMN4R2-60PL

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Product data sheet

5 February 2013

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

Ptot

total power dissipation

Tmb = 25 °C; Fig. 2

-

263

W

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering temperature

-

260

°C

Source-drain diode

IS

source current

Tmb = 25 °C

[1]

-

130

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

701

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

Fig. 3

-

283

mJ

[1] Continuous current is limited by package.

003aak806

0

30

60

90

120

150

180

0

40

80

120

160

200

Tj (°C)

ID

ID

(A)

(A)

(1)

(1) Capped at 130A due to package

Fig. 1. Continuous drain current as a function of

mounting base temperature

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature