PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

5 February 2013

Product data sheet

1. General description

Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design

and manufacture has been optimized for use in battery operated power tools.

2. Features and benefits

• High efficiency due to low switching & conduction losses

• Robust construction for demanding applications

• Logic level gate

3. Applications

• Battery-powered tools

• Load switching

• Motor control

• Uninterruptible power supplies

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

-

60

V

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 1

[1]

-

-

130

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

-

263

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 11

-

3.17

3.9

mΩ

Dynamic characteristics

QG(tot)

total gate charge

-

151

-

nC

QGD

gate-drain charge

VGS = 10 V; ID = 25 A; VDS = 48 V;

Fig. 13; Fig. 14

-

27

-

nC

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche

energy

ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

Fig. 3

-

-

283

mJ

[1] Continuous current is limited by package.