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PSMN4R2-60PL Datasheet(PDF) 8 Page - Nexperia B.V. All rights reserved |
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PSMN4R2-60PL Datasheet(HTML) 8 Page - Nexperia B.V. All rights reserved |
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8 / 13 page ![]() © Nexperia B.V. 2017. All rights reserved Nexperia PSMN4R2-60PL N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78 PSMN4R2-60PL All information provided in this document is subject to legal disclaimers. Product data sheet 5 February 2013 8 / 13 003aag821 0 0.6 1.2 1.8 2.4 -60 0 60 120 180 Tj (°C) a Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 13. Gate charge waveform definitions 003aah912 0 2 4 6 8 10 0 40 80 120 160 QG(nC) VGS (V) VDS= 48V 14 V Fig. 14. Gate-source voltage as a function of gate charge; typical values 003aah913 102 103 104 10-1 1 10 102 VDS(V) C (pF) Ciss Crss Coss Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values |
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