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STLD110N10F7 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STLD110N10F7
Description  N-channel 100 V, 5 mΩ typ., 107 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 dual side cooling package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STLD110N10F7 Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
±20
V
ID (1)
Drain current (continuous) at TC = 25 °C
107
A
Drain current (continuous) at TC = 100 °C
80
A
IDM (2) (1)
Drain current (pulsed)
428
A
PTOT (1)
Total power dissipation at TC = 25 °C
150
W
ID (3) (2)
Drain current (continuous) at Tpcb = 25 °C
21
A
Drain current (continuous) at Tpcb = 100 °C
14
A
IDM (2) (3)
Drain current (pulsed)
84
A
PTOT (3)
Total power dissipation at Tpcb = 25 °C
4.8
W
TJ
Operating junction temperature range
- 55 to 175
°C
Tstg
Storage temperature range
1. This value is rated according to Rthj-case bottom side.
2. Pulse width limited by safe operating area
3. This value is rated according to Rthj-pcb
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-c top side
Thermal resistance junction-case top side
2.8
°C/W
Rthj-c bottom side Thermal resistance junction-case bottom side
1
Rthj-pcb (1)
Thermal resistance junction-pcb
31.3
1. When mounted on 1 inch² 2 Oz. Cu board, t ≤ 10 s
STLD110N10F7
Electrical ratings
DS11930 - Rev 4
page 2/13



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