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STM32L010RB Datasheet(PDF) 46 Page - STMicroelectronics |
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STM32L010RB Datasheet(HTML) 46 Page - STMicroelectronics |
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46 / 89 page ![]() Electrical characteristics STM32L010RB 46/89 DS12319 Rev 3 Figure 9. IDD vs VDD, Run mode, code running from Flash memory, Range 2, HSE bypass, 1 ws MSv48113V1 Table 21. Current consumption in Run mode, code with data processing running from RAM Symbol Parameter Conditions fHCLK (MHz) Typ Max(1) Unit IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash memory switched OFF fHSE = fHCLK up to 16 MHz, included fHSE = fHCLK/2 above 16 MHz (PLL ON)(2) Range 3, VCORE =1.2 V, VOS[1:0] = 11 1 175 230 µA 2 315 360 4 570 630 Range 2, VCORE = 1.5 ,V, VOS[1:0] = 10 4 0.71 0.78 mA 8 1.35 1.6 16 2.7 3 Range 1, VCORE =1.8 V, VOS[1:0] = 01 81.7 1.9 16 3.2 3.7 32 6.65 7.1 MSI clock Range 3, VCORE =1.2 V, VOS[1:0] = 11 0.065 38 98 µA 0.524 105 160 4.2 615 710 IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash memory switched OFF HSI16 clock source (16 MHz) Range 2, VCORE =1.5 V, VOS[1:0] = 10 16 2.85 3 mA Range 1, VCORE =1.8 V, VOS[1:0] = 01 32 6.9 7.3 1. Guaranteed by characterization results at 85 °C, not tested in production, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). |
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