STM32L010RB datasheet(47/89 Pages) STMICROELECTRONICS

47 / 89 page

DS12319 Rev 3

47/89

STM32L010RB

Electrical characteristics

Table 22. Current consumption in Run mode vs code type, code with data processing

running from RAM(1)

Symbol

Parameter

Conditions

fHCLK

Typ

Unit

IDD (Run

from

RAM)

Supply current in

Run mode, code

executed from

RAM, Flash

memory switched

OFF

fHSE = fHCLK up to 16 MHz,

included,

fHSE = fHCLK/2 above 16 MHz

(PLL ON)(2)

Range 3

VCORE =1.2 V

VOS[1:0] = 11

Dhrystone

4 MHz

570

µA

CoreMark

670

Fibonacci

410

while(1)

375

Range 1

VCORE =1.8 V

VOS[1:0] = 01

Dhrystone

32 MHz

6.7

CoreMark

Fibonacci

5.9

while(1)

5.2

1. Guaranteed by characterization results, not tested in production, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

Table 23. Current consumption in Sleep mode

Symbol

Parameter

Conditions

fHCLK

(MHz)

Typ

Max(1)

Unit

IDD

(Sleep)

Supply current

in Sleep

mode, Flash

memory OFF

fHSE = fHCLK up to 16 MHz

included,

fHSE = fHCLK/2 above 16

MHz (PLL ON)(2)

Range 3,

VCORE =1.2 V,

VOS[1:0] = 11

143

110

µA

272

140

130

200

Range 2,

VCORE =1.5 V,

VOS[1:0] = 10

160

220

305

380

590

690

Range 1,

VCORE =1.8 V,

VOS[1:0] = 01

370

460

715

840

1650

2000

MSI clock

Range 3,

VCORE =1.2 V,

VOS[1:0] = 11

0.065

0.524

31.5

110

4.2

140

230

HSI16 clock source (16

MHz)

Range 2,

VCORE =1.5 V,

VOS[1:0] = 10

665

850

Range 1,

VCORE =1.8 V,

VOS[1:0] = 01

1750

2100

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