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GA100JT12 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # GA100JT12
Description  isc N-Channel Transistor
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GA100JT12 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  GA100JT12 Datasheet HTML 1Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 2Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 3Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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isc N-Channel Transistor
GA100JT12
www.iscsemi.com
2023-9-26
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.28
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
RDS(on)
Drain-Source On-Resistance
ID= 100A;Tc=25℃
--
10
--
mΩ
RDS(on)
Drain-Source On-Resistance
ID= 100A;Tc=150℃
--
18
--
mΩ
RDS(on)
Drain-Source On-Resistance
ID= 100A;Tc=175℃
--
21
--
mΩ
VGE(sat)
Gate – Source Saturation Voltage
ID= 100A;ID/IG=40A;
Tc=25℃
--
3.42
--
V
VGE(sat)
Gate – Source Saturation Voltage
ID= 100A;ID/IG=30A;
Tc=175℃
--
3.23
--
V
hFE
DC Current Gain
VDS= 8V
ID= 100A;Tc=25℃
--
100
105
hFE
DC Current Gain
VDS= 8V
ID= 100A;Tc=125℃
--
65
--
hFE
DC Current Gain
VDS= 8V
ID= 100A;Tc=175℃
--
58
--
ISG
Gate-Body Leakage Current
VGS= 20V;VDS= 0
--
40
--
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 1200V; VGS= 0
Tc=25℃
--
50
--
uA
IDSS
Zero Gate Voltage Drain Current
VDS= 1200V; VGS= 0
Tc=150℃
--
100
--
uA
IDSS
Zero Gate Voltage Drain Current
VDS= 1200V; VGS= 0
Tc=175℃
--
100
--
uA
Ciss
Input Capacitance
VGS = 0V,
VDS =800V,
f = 1.0MHz
--
14.3
--
nF
Coss
Output Capacitance
--
250
--
pF
Crss
Reverse Transfer Capacitance
--
250
--
nF
EOSS
Output Capacitance Stored Energy
--
85
--
uJ
Qgs
Gate-Source Charge
VGS =-5----3V,
--
120
--
nC



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