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GA100JT12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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GA100JT12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() isc N-Channel Transistor GA100JT12 www.iscsemi.com 2023-9-26 1 DESCRIPTION · Optional Gate Return Pin · Exceptional Safe Operating Area · Excellent Gain Linearity · Positive Temperature Coefficient of RDS,ON APPLICATIONS · DC-DC converters · Pulse Generators · DC Choppers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 1200 V VSD Diode Forward On-Voltage 25 V VSG Reverse Gate Source Voltage 30 V ID Drain Current-continuous@ TC=25℃ 160 A ID Drain Current-continuous@ TC=115℃ 100 A IG Continuous Gate Current 7 A IGR Continuous Gate Return Current 7 A IDM Pulse Drain Current 264 A PD Total Dissipation@TC=25℃ 535 W PD Total Dissipation@TC=115℃ 214 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ |
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