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GA100JT12 Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited

Part # GA100JT12
Description  isc N-Channel Transistor
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GA100JT12 Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited

  GA100JT12 Datasheet HTML 1Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 2Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 3Page - Inchange Semiconductor Company Limited GA100JT12 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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isc N-Channel Transistor
GA100JT12
www.iscsemi.com
2023-9-26
3
Qgd
Gate-Drain Charge
VGS = 0V,
VDS =800V,
--
350
--
Qg
Gate Charge - Total
--
470
--
RG(INT-ON)
Internal Gate Resistance – ON
VGS > 2.5 V,
VDS = 0 V, Tj = 175 ºC
--
0.1
--
Ω
td(on)
Turn-on Delay Time
VDS =800V,
ID = 100A,
Tj = 25 ºC
--
12
--
ns
tr
Turn-on Rise Time
--
40
--
td(off)
Turn-off Delay Time
--
37
--
tf
Turn-off Fall Time
--
25
--
td(on)
Turn-on Delay Time
VDS =800V,
ID = 100A,
Tj = 175 ºC
--
10
--
ns
tr
Turn-on Rise Time
--
40
--
td(off)
Turn-off Delay Time
--
45
--
tf
Turn-off Fall Time
--
20
--
Eon
Turn-On Energy Per Pulse
VDS =800V,
ID = 100A,
Tj = 25 ºC
--
1.8
--
mJ
Eoff
Turn-Off Energy Per Pulse
--
1.4
--
Etot
Total Switching Energy
--
3.2
--
Eon
Turn-On Energy Per Pulse
VDS =800V,
ID = 100A,
Tj =175 ºC
--
1.85
--
mJ
Eoff
Turn-Off Energy Per Pulse
--
1.3
--
Etot
Total Switching Energy
--
3.15
--



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