Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

M49000000G Datasheet(PDF) 25 Page - Advanced Micro Devices

Part # M49000000G
Description  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
PDF  64 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

M49000000G Datasheet(HTML) 25 Page - Advanced Micro Devices

Back Button M49000000G Datasheet HTML 21Page - Advanced Micro Devices M49000000G Datasheet HTML 22Page - Advanced Micro Devices M49000000G Datasheet HTML 23Page - Advanced Micro Devices M49000000G Datasheet HTML 24Page - Advanced Micro Devices M49000000G Datasheet HTML 25Page - Advanced Micro Devices M49000000G Datasheet HTML 26Page - Advanced Micro Devices M49000000G Datasheet HTML 27Page - Advanced Micro Devices M49000000G Datasheet HTML 28Page - Advanced Micro Devices M49000000G Datasheet HTML 29Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 25 / 64 page
background image
24
Am49DL320BG
June 25, 2002
P R E L I M I NARY
Table 10.
System Interface String
Table 11.
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N ms
22h
44h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N times typical
24h
48h
0000h
Max. timeout for buffer write 2
N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2
N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com