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M49000000G Datasheet(PDF) 12 Page - Advanced Micro Devices |
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M49000000G Datasheet(HTML) 12 Page - Advanced Micro Devices |
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12 / 64 page ![]() June 25, 2002 Am49DL320BG 11 P R E L I M I NARY Table 2. Device Bus Operations—Flash Byte Mode, CIOf = V IL Legend: L = Logic Low = V IL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = pSRAM Address Input, Byte Mode, SADD = Flash Sector Address, A IN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Other operations except for those indicated in this column are inhibited. 2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time. 3. Don’t care or open LB#s or UB#s. 4. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = V IH the boot sectors protection will be removed. If WP#/ACC = V ACC (9V), the program time will be reduced by 40%. 5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Autoselect Mode” section. 6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = V IH, the two outermost boot sector protection depends on whether they were last protected or unprotected using the method described in “Autoselect Mode”. If WP#/ACC = VHH, all sectors will be unprotected. 7. Data will be retained in pSRAM. 8. Data will be lost in pSRAM. Operation (Notes 1, 2) CE#f CE1#s CE2s OE# WE# Address LB#s UB#s RESET# WP#/ACC (Note 4) DQ7– DQ0 DQ15– DQ8 Read from Flash (Note 7) L HH LH A IN XX H L/H D OUT High-Z (Note 8) H L Write to Flash (Note 7) L HH HL A IN X X H (Note 4) D IN High-Z (Note 8) H L Standby V CC ± 0.3 V HH X X X X X V CC ± 0.3 V H High-Z High-Z Deep Power-down Standby V CC ± 0.3 V HL X X X X X V CC ± 0.3 V H High-Z High-Z Output Disable L L H HH X X X H L/H High-Z High-Z HH X X X Flash Hardware Reset (Note 7) X HH X X X X X L L/H High-Z High-Z (Note 8) H L Sector Protect (Note 5) (Note 7) L HH HL SADD, A6 = L, A1 = H, A0 = L XX VID L/H DIN X (Note 8) H L Sector Unprotect (Note 5) (Note 7) L HH HL SADD, A6 = H, A1 = H, A0 = L XX V ID (Note 6) D IN X (Note 8) H L Temporary Sector Unprotect (Note 7) X HH XX X X X V ID (Note 6) D IN High-Z (Note 8) H L Read from pSRAM H L H L H A IN LL HX D OUT D OUT H L High-Z D OUT LH D OUT High-Z Write to pSRAM H L H X L A IN LL HX D IN D IN H L High-Z D IN LH D IN High-Z |
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