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B2M080120Z Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR

Part # B2M080120Z
Description  SiC MOSFET
PDF  14 Pages
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Manufacturer  BASICSEMI [BASIC SEMICONDUCTOR]
Direct Link  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2M080120Z Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR

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Electrical Characteristics (Defined at T
j=25°C unless otherwise specified)
Static Characteristics
V
GS=18V, VDS=0V
V
DS=1200V, VGS=0V
V
DS=1200V, VGS=0V,Tj=175°C
V
GS=18V, ID=20A
V
GS=15V, ID=20A
V
GS=18V, ID=20A,Tj=175°C
V
DS=10V, ID=20A
V
GS=VDS, ID=5mA
V
GS=VDS, ID=5mA,Tj=175°C
Maximum Ratings
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
1200
2.7
2.3
3.5
1.9
100
1
10
50
200
100
80
105
120
7.7
V
V
nA
μA
mΩ
S
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Transconductance
Gate-Source Leakage Current
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS=0V, ID=100μA
Pulse with t
p limited by Tjmax
Symbol
Parameter
Test conditions
Unit
Value
V
DSmax
V
GSmax
1)
V
GSop
I
D
I
D,pulse
P
tot
T
j
T
stg
Drain-Source Voltage
Gate-Source Voltage
Recommend Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
V
V
V
A
A
A
W
°C
°C
-10/22
-4/18
28
39
68
187
-55~175
V
GS=18V, TC=25°C
V
GS=18V, TC=100°C
T
C=25°C, Tj=175°C
E
AS
Single pulse avalanche energy
mJ
156
T
C=25°C, L=2mH, IAS=12.5A,
V
DD=140V
1200
V
GS=0V, ID=100μA
-55~175
M
d
TO-247 mounting torque
M3 Screw
N·m
0.7
1) Note: When using MOSFET Body Diode V
GSmax=-4/22V
B2M080120Z
Rev. 0.0



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