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B2M080120Z Datasheet(PDF) 4 Page - BASIC SEMICONDUCTOR

Part # B2M080120Z
Description  SiC MOSFET
PDF  14 Pages
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Manufacturer  BASICSEMI [BASIC SEMICONDUCTOR]
Direct Link  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2M080120Z Datasheet(HTML) 4 Page - BASIC SEMICONDUCTOR

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2) Note: FWD: Freewheeling diode
SiC MOSFET
4 / 13
www.basicsemi.com
Switching Characteristics
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
10
18
22
8
260
32
190
34
ns
ns
ns
ns
uJ
uJ
uJ
uJ
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy (Body Diode FWD)
Turn-Off Energy (Body Diode FWD)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Turn-On Energy (SiC Diode FWD)
Turn-Off Energy (SiC Diode FWD)
E
on
E
off
V
DC=800V, VGS=-4/18V
I
D=20A, RG(ext)=2.2Ω
L
σ=50nH, Tj=25°C
FWD 2) : body diode at V
GS=-4V
Inductive Load
V
DC=800V, VGS=-4/18V
I
D=20A, RG(ext)=2.2Ω
L
σ=50nH, Tj=175°C
FWD 2) : body diode at V
GS=-4V
Inductive Load
Eon includes diode reverse
recovery
10
21
26
8
400
35
ns
ns
ns
ns
uJ
uJ
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy (Body Diode FWD)
Turn-Off Energy (Body Diode FWD)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
175
33
uJ
uJ
Turn-On Energy (SiC Diode FWD)
Turn-Off Energy (SiC Diode FWD)
E
on
E
off
Eon includes diode reverse
recovery
V
DC=800V, VGS=-4/18V
I
D=20A, RG(ext)=2.2Ω
L
σ=50nH, Tj=25°C
FWD 2) : B2D10120H1
V
DC=800V, VGS=-4/18V
I
D=20A, RG(ext)=2.2Ω
L
σ=50nH, Tj=175°C
FWD 2) : B2D10120H1
B2M080120Z
Rev. 0.0



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