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W9N150V Datasheet(PDF) 2 Page - STMicroelectronics

Part # W9N150V
Description  N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

W9N150V Datasheet(HTML) 2 Page - STMicroelectronics

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Electrical ratings
STW9N150
2/9
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
1500
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
8
A
ID
Drain current (continuous) at TC = 100°C
5
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
32
A
PTOT
Total dissipation at TC = 25°C
350
W
Derating factor
0.37
W/°C
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
0.36
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
°C/W
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Tbd
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
Tbd
mJ



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