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SST26VF016B-80E/MF Datasheet(PDF) 6 Page - Microchip Technology

Part # SST26VF016B-80E/MF
Description  2.5V/3.0V 16-Mbit Serial Quad I/O™ (SQI™) Flash Memory
PDF  84 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26VF016B-80E/MF Datasheet(HTML) 6 Page - Microchip Technology

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SST26VF016B
DS20005262G-page 6
2014-2022 Microchip Technology Inc. and its subsidiaries
4.0
DEVICE OPERATION
SST26VF016B supports both Serial Peripheral Inter-
face (SPI) bus protocol and a 4-bit multiplexed SQI bus
protocol. To provide backward compatibility to tradi-
tional SPI Serial Flash devices, the device’s initial state
after a Power-on Reset is SPI mode which supports
multi-I/O (x1/x2/x4) Read/Write commands. A com-
mand instruction configures the device to SQI mode.
The dataflow in the SQI mode is similar to the SPI
mode, except it uses four multiplexed I/O signals for
command, address and data sequence.
SQI Flash Memory supports both Mode 0 (0,0) and
Mode 3 (1,1) bus operations. The difference between
the two modes is the state of the SCK signal when the
bus host is in standby mode and no data are being
transferred.
The SCK signal is low for Mode 0 and SCK signal is
high for Mode 3. For both modes, the Serial Data I/O
(SIO[3:0]) is sampled at the rising edge of the SCK
clock signal for input and driven after the falling edge of
the SCK clock signal for output. The traditional SPI pro-
tocol uses separate input (SI) and output (SO) data sig-
nals as shown in Figure 4-1. The SQI protocol uses
four multiplexed signals, SIO[3:0], for both data in and
data out, as shown in Figure 4-2. This means the SQI
protocol quadruples the traditional bus transfer speed
at the same clock frequency, without the need for more
pins on the package.
FIGURE 4-1:
SPI PROTOCOL (TRADITIONAL 25 SERIES SPI DEVICE)
FIGURE 4-2:
SQI SERIAL QUAD I/O PROTOCOL
4.1
Device Protection
SST26VF016B offers a flexible memory protection
scheme that allows the protection state of each individ-
ual block to be controlled separately. In addition, the
Write Protection Lock-Down register prevents any
change of the lock status during device operation. To
avoid inadvertent writes during power-up, the device is
write-protected by default after a Power-on Reset
cycle. A Global Block Protection Unlock command
offers a single command cycle that unlocks the entire
memory array for faster manufacturing throughput.
For extra protection, there is an additional nonvolatile
register that can permanently write-protect the Block
Protection register bits for each individual block.
Each of the corresponding lock-down bits are
One-Time-Programmable (OTP) — once written, they
cannot be erased. Data that had been previously pro-
grammed into these blocks cannot be altered by pro-
gramming or erase and are not reversible.
MODE 3
SCK
SI
SO
CE#
MODE 3
Don't Care
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MODE 0
MODE 0
High-Impedance
MSb
MSb
MODE 3
CLK
SIO[3:0]
CE#
MODE 3
C1
C0
A5
A4
A3
A2
A1
A0
H0
L0
H1
L1
H2
L2
H3
L3
MODE 0
MODE 0
MSb



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