UTG4N65-S

Preliminary

Insulated Gate Bipolar Transistor

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-107.a

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ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCES

650

V

Gate-Emitter Voltage

VGES

±20

V

Transient Gate-emitter voltage (tp < 5 ms)

±25

V

Continuous Collector Current

TC=25°C

IC

8A

TC=100°C

4

A

Collector Current Pulsed (Note 1)

ICM

16

A

Diode Forward Current

TC=25°C

IF

8A

TC=100°C

4

A

Short Circuit Withstand Time

VGE = 15V, VCC ≤ 200V

Allowed number of short circuits < 1000

Time between short circuits: ≥1.0s

TVJ= 25°C

tSC

3

µs

Power Dissipation (TC=25°C)

PD

36

W

Operating Junction Temperature

TJ

-40 ~ +175

°C

Storage Temperature Range

TSTG

-55 ~ +175

°C

Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

2. Pulse width limited by maximum junction temperature.

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THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

θJC

3.47

°C/W